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NANOF研究文章|高效III-V族纳米线太阳能电池：未来之路

24 Nov 2025 gabriels

Solar cells (SCs) based on dense arrays of III–V nanowires have long been considered strong candidates for the fabrication of stable, high power conversion efficiency (PCE) photovoltaic devices at reduced costs. Over the last two decades intense research has been devoted worldwide to the field; however, the nanowire SCs (NWSCs) reported so far in the literature have not confirmed theoretical expectations, their PCE figures remaining well below 18% under 1-sun illumination. The present work proposes an innovative strategy to overcome this limitation, i.e. through the use of intermediate-band gap semiconductors (IBGSs), namely GaNAs and related dilute-nitride III–V (III-N-V) compounds, as nanowire absorbing materials in substitution of the most common GaAs and InP. This allows us to combine the multi-band absorption functionality of IBGSs with the advantages associated with NWSCs, i.e. the super-absorptive properties of dense nanowire arrays and reduced volumes of active materials. Very high PCEs are expected for such nanowire-based intermediate band SCs. However, their practical realization requires suitably designed core-multishell radial junction nanowire heterostructures; an example of a perspective nano-device architectures is described herein. The potential and possible limitations/challenges facing current nanowire self-assembly technologies for the fabrication of the proposed III-N-V based nanowire IBSCs are discussed.

文章介绍

High efficiency III–V nanowire solar cells: the road ahead

Paola Prete and Nico Lovergine

通讯作者：

Paola Prete，意大利萨兰托大学

期刊介绍

Nano Futures

2024年影响因子：3.3 Citescore：5.2
Nano Futures（NANOF）是一本具有高影响力的多学科、交叉学科期刊，捕捉开拓性研究和对纳米科学产生长远影响的未来导向性研究。这本期刊将为纳米领域的科研人员提供一个独特的新平台。在快速发表具有重大发现的研究工作的同时，首要任务是将具有高影响力的内容与高质量的作者服务相结合。