SST特刊征稿|Special Issue on Wide Band Gap Semiconductors

Wide-bandgap (WBG) semiconductors have made huge impact on the whole society over the past decades and will continue to advance the global industry in the future. (Image courtesy of Guest Editors)

Due to their broad bandgap tunability, high carrier mobility, and high thermal stability, wide-bandgap (WBG) semiconductors, such as SiC, GaN, Ga₂O₃, diamond are attracting significant interest, with scope spanning from fundamental researches to technological applications. With the gradual maturation of crystal growth and device fabrication technology, WBG material system has hold overwhelming superiority in the electronic information industry and impacted the whole society over the past decades. Even though lots of products are already available in the market, expanded materials science investigations of WBG semiconductors are still vital to further clarify the underlying physics and explore the possible novel applications.

This Special Issue is dedicated to highlight the significant contributions and broad impacts made by the leading scientists in this emerging research area. Topics include but are not limited to the following: physics, growth of crystalline materials, characterization techniques; device fabrication and applications (LED, LD, detectors, solar cells, power devices, high frequency devices), modeling, first-principles calculations, etc. We believe that this special issue will provide an overall perspective on the current status and future developments of WBG semiconductor.

投稿流程

特刊文章与SST期刊常规文章遵循相同的审稿流程和内容标准，并采用同样的投稿模式。有关准备文章及投稿的详细信息，可以参阅IOPscience页面的作者指南。作者可登入期刊主页进行在线投稿，在“文章类型”中选择“特刊文章”，并在“选择特刊”的下拉框中选择“Special issue on Wide Band Gap Semiconductors”。