JPhysD特刊征稿|Special issue on graphite carbon nitride

客座编辑

• 张俊英，北京航空航天大学
• 曹少文，武汉理工大学
• 许景三，澳大利亚昆士兰科技大学
• 张振翼，大连民族大学

主题范围

Graphite carbon nitride (g-C3N4) may be regarded as “doped” graphite in which carbon atoms are regularly substituted by nitrogen, with the layers that constitute this material being held together by weak van der Waals forces. As a metal-free, two-dimensional conjugated semiconductor, g-C3N4 has been extensively researched as photocatalyst for water splitting, pollutants degradation and CO2 reduction. Recently, g-C3N4 has been promoted and developed for applications ranging from photocatalysts and luminescence materials to sensors, batteries and supercapacitors, and so on.

The properties of g-C3N4 are greatly influenced by the structure, including the crystal structure, microstructure, electronic structure, and/or heterostructure. In recent years, many synthetic techniques and effective modification methods to optimize the performance of g-C3N4 from the perspectives of electronic structure modulation, nanostructure design, crystal structure engineering, and heterostructure construction have been proposed.

The purpose of this special issue is to collect the latest research results in the field of g-C3N4, both from a fundamental and applied perspective. The topics of the Special Issue will cover various aspects of g-C3N4 in all of its diversity.

投稿流程

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作者可登入期刊主页进行在线投稿，在“文章类型”中选择“特刊文章”，并在“选择特刊”的下拉框中选择“Special issue on graphite carbon nitride”。

投稿截止日期：2022年6月30日。