JPhysD特刊征稿|Special issue on graphite carbon nitride
Graphite carbon nitride (g-C3N4) may be regarded as “doped” graphite in which carbon atoms are regularly substituted by nitrogen, with the layers that constitute this material being held together by weak van der Waals forces. As a metal-free, two-dimensional conjugated semiconductor, g-C3N4 has been extensively researched as photocatalyst for water splitting, pollutants degradation and CO2 reduction. Recently, g-C3N4 has been promoted and developed for applications ranging from photocatalysts and luminescence materials to sensors, batteries and supercapacitors, and so on.
The properties of g-C3N4 are greatly influenced by the structure, including the crystal structure, microstructure, electronic structure, and/or heterostructure. In recent years, many synthetic techniques and effective modification methods to optimize the performance of g-C3N4 from the perspectives of electronic structure modulation, nanostructure design, crystal structure engineering, and heterostructure construction have been proposed.
The purpose of this special issue is to collect the latest research results in the field of g-C3N4, both from a fundamental and applied perspective. The topics of the Special Issue will cover various aspects of g-C3N4 in all of its diversity.
Journal of Physics D: Applied Physics（JPhysD，《物理学报D：应用物理》）发表应用物理各领域的前沿研究和综述，具体包括：应用磁学和磁性材料、半导体和光子学、低温等离子体和等离子表面相互作用、凝聚态物理、表面科学和纳米结构、生物物理以及能源等六个领域。文章类型包括原创性论文、研究路线图、通讯以及每年针对热点研究的专题综述和特刊。