NANOX特刊征稿|聚焦基于超宽带隙的通信、成像和紫外线传感器材料

特刊详情

客座编辑

• Mukesh Kumar，印度理工学院罗巴尔校区
• Usha Philipose，美国北得克萨斯州大学

主题范围

The UV region of the light spectrum often eludes the naked eye and hence can be used for niche applications. With the advent of wireless technology and safe communications, UV based technologies can be utilized for non-line-of-sight communications especially for military and civil applications. Moreover, high resolution UV imaging is also the need of the hour considering the requirements for flame detectors (for robotic firefighters, hydrogen energy safety equipment, etc.) and missile tracking. Ultra-wide band gap semiconductors (including Ga₂O₃, diamond, AlGaN, etc.) are blessed with huge band gaps which makes them intrinsically responsive to UV alone.

The challenges in the field of material preparation and control, reliability and resilience and integration with existing technologies are aplenty and require extensive research and attention of the research community. In this regard, this focus issue on “Ultra-wide band gap based materials for communication, imaging and UV sensors” focuses on the following aspects:

• Growth of ultra-wide bandgap materials
• Solar-blind photodetectors
• Ultra-wide gap materials for communication and imaging
• Heterostructures of ultra-wide band gap materials with suitable materials for better performance
• Deep-UV photodetectors
• Innovation in design and architecture of ultra-wide band gap based devices
• Interface and contact engineering of the devices
• Performance under extreme environment

投稿流程

特刊文章与NANOX期刊常规文章遵循相同的审稿流程和内容标准，并采用同样的投稿模式。

有关准备文章及投稿的详细信息，可以参阅IOPscience页面的作者指南。

作者可登入期刊主页进行在线投稿，先选择“文章类型”，然后在“选择特刊”的下拉框中选择“Focus on Ultra-wide Band Gap Based Materials for Communication, Imaging and UV Sensors”。

投稿截止日期：2024年7月31日。